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TN6717A / NZT6717
Discrete POWER & Signal Technologies
TN6717A
NZT6717
C
E C C
TO-226
BE
B
SOT-223
NPN General Purpose Amplifier
This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.0 A. Sourced from Process 39.
Absolute Maximum Ratings*
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
TA = 25C unless otherwise noted
Parameter
Value
80 80 5.0 1.2 -55 to +150
Units
V V V A C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD RJC RJA
TA = 25C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient TN6717A 1.0 8.0 50 125
Max
*NZT6717 1.0 8.0 125
Units
W mW/C C/W C/W
*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
(c) 1997 Fairchild Semiconductor Corporation
TN6717A / NZT6717
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol Parameter
TA = 25C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Cutoff Current Emitter-Cutoff Current I C = 1.0 mA, IB = 0 I C = 100 A, I E = 0 I E = 100 A, IC = 0 VCB = 60 V, IE = 0 VEB = 5.0 V, IC = 0 80 80 5.0 0.1 0.1 V V V A A
ON CHARACTERISTICS*
hFE VCE(sat) VBE(on) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage I C = 50 mA, VCE = 1.0 V I C = 250 mA, VCE = 1.0 V I C = 250 mA, IB = 100 mA I C = 250 mA, VCE = 1.0 V 80 50 250 0.5 1.2 V V
SMALL SIGNAL CHARACTERISTICS
hfe Ccb Small-Signal Current Gain Collector-Base Capacitance I C = 200 mA, VCE = 5.0 V, f = 20 MHz VCB = 10 V, IE = 0, f = 1.0 MHz 2.5 25 30 pF
*Pulse Test: Pulse Width 300 s, Duty Cycle 1.0%
Typical Characteristics
300 250 200
25 C
VCESAT- COLLECTOR-EMITTER VOLTAGE (V)
h FE - TYPICAL PULSED CURRENT GAIN
Typical Pulsed Current Gain vs Collector Current
V CE = 5V
125 C
Collector-Emitter Saturation Voltage vs Collector Current
0.5 0.4 0.3
25 C
= 10
150 100
- 40 C
0.2
125 C
50 0 0.001 0.01 0.1 I C - COLLECTOR CURRENT (A) 1 1.5
0.1
- 40 C
0 0.01
0.1 I C - COLLECTOR CURRENT (A)
P 39
1
TN6717A / NZT6717
NPN General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
V BE(ON) BASE-EMITTER ON VOLTAGE (V)
VBESAT- BASE-EMITTER VOLTAGE (V)
Base-Emitter Saturation Voltage vs Collector Current
1.2 1 0.8 0.6 0.4 0.2
- 40 C 25 C 125 C
Base-Emitter ON Voltage vs Collector Current
1
= 10
0.8
- 40 C 25 C
0.6
125 C
0.4
V CE = 5V
0.01 0.1 - COLLECTOR CURRENT (A)
P 39
1
10 100 I C - COLLECTOR CURRENT (mA)
1000
0.2 0.001 I
C
1
0.5 0.4 0.3
25 C
C OBO - COLLECTOR-BASE CAPACITANCE (pF)
VCESAT- COLLECTOR-EMITTER VOLTAGE (V)
Collector-Emitter Saturation Voltage vs Collector Current
= 10
Collector-Base Capacitance vs Collector-Base Voltage
40
f = 1 MHz
30
20
0.2
125 C
0.1
- 40 C
10
0 0.01
0.1 I C - COLLECTOR CURRENT (A)
P 39
1
0 0 4 8 12 Pr39 16 20 24 28
V CB- COLLECTOR-BASE VOLTAGE (V)
f T - GAIN BANDWIDTH PRODUCT (MHz)
500 V CE = 10V 400 300 200 100 0
I C - COLLECTOR CURRENT (A)
Gain Bandwidth Product vs Collector Current
Safe Operating Area TO-226
10
10
1
DC
T
100 S*
S*
DC
*PULSED OPERATION T A = 25 C
T
CO 1.0 LLE CTO ms RL * EA AM D= BIE 25 NT C =
0.1
25
C
LIMIT DETERMINED BY BV CEO
1
10 100 I C - COLLECTOR CURRENT (mA)
1000
0.01
1
10 V CE - COLLECTOR-EMITTER VOLTAGE (V)
100
TN6717A / NZT6717
NPN General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
Power Dissipation vs Ambient Temperature
1 PD - POWER DISSIPATION (W)
0.75
TO-226 SOT-223
0.5
0.25
0
0
25
50 75 100 TEMPERATURE (o C)
125
150

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